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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
KOKUSAI ELECTRIC CORPORATION	3-4 KANDAKAJI-CHO CHIYODA-KU TOKYO 101-0045

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
• C23F:NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM S....

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• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Ashitani, Atsuhiko	Toyama, JP	9	53
Kowa, Kota	Toyama, JP	5	0
Mizuno, Norikazu	Toyama, JP	51	1944
Ogawa, Arito	Toyama, JP	91	962
Seino, Atsuro	Toyama, JP	25	45

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date
3.5 Year Payment	$1600.00	$800.00	$400.00	Jun 17, 2028
7.5 Year Payment	$3600.00	$1800.00	$900.00	Jun 17, 2032
11.5 Year Payment	$7400.00	$3700.00	$1850.00	Jun 17, 2036

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge - 3.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge - 7.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge - 11.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

Full Text

US Patent Application No: 12170206

Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus

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