Three-dimensional capacitors with double metal electrodes

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12176147
APP PUB NO 20220415573A1
SERIAL NO

17357385

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Abstract

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Disclosed herein are IC structures with three-dimensional capacitors with double metal electrodes provided in a support structure (e.g., a substrate, a die, a wafer, or a chip). An example three-dimensional capacitor includes first and second capacitor electrodes and a capacitor insulator between them. Each capacitor electrode includes a planar portion extending across the support structure and one or more via portions extending into one or more via openings in the support structure. The capacitor insulator also includes a planar portion and a via portion extending into the via opening(s). The planar portion of the capacitor electrodes are thicker than the via portions. Each capacitor electrode may be deposited using two deposition processes, such as a conformal deposition process for depositing the via portion of the electrode, and a sputter process for depositing the planar portion of the electrode.

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Patent Owner(s)

Patent OwnerAddress
INTEL CORPORATION2200 MISSION COLLEGE BOULEVARD SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Giraud-Carrier, Matthieu Hillsboro, US 1 0
Gomes, Wilfred Portland, US 203 201
Lajoie, Travis W Forest Grove, US 46 94
Sell, Bernhard Portland, US 115 1163
Sharma, Abhishek A Hillsboro, US 257 560
Waldemer, James D Hillsboro, US 1 0

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