Method for manufacturing a semiconductor using slurry

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12176217
APP PUB NO 20230290641A1
SERIAL NO

18319454

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Abstract

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The present disclosure provides a method for manufacturing a semiconductor. The method includes: forming a metal oxide layer over a gate structure over a substrate; forming a dielectric layer over the metal oxide layer; forming a metal layer over the metal oxide layer; and performing a chemical mechanical polish (CMP) operation to remove a portion of the dielectric layer and a portion of the metal layer, the CMP operation stopping at the metal oxide layer, wherein a slurry used in the CMP operation includes a ceria compound. The present disclosure also provides a method for planarizing a metal-dielectric surface.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chao, Huang-Lin Hillsboro, US 118 101
Hsu, Chung-Wei Hsinchu County, TW 132 258
Lee, An-Hsuan Hsinchu, TW 15 2
Lee, Shen-Nan Hsinchu County, TW 56 195
Liao, Chun-Hung Taichung, TW 31 13
Tsai, Teng-Chun Hsinchu, TW 275 2741
Tsai, Tsung-Ling Hsinchu, TW 14 24
Wu, Chen-Hao Hsinchu, TW 36 31

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