Magnetic random access memory and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12178051
APP PUB NO 20230380182A1
SERIAL NO

18228210

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Abstract

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In a method of manufacturing a semiconductor device, a magnetic random access memory (MRAM) cell structure is formed. The MRAM cell structure includes a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode. A first insulating cover layer is formed over the MRAM cell structure. A second insulating cover layer is formed over the first insulating cover layer. An interlayer dielectric (ILD) layer is formed. A contact opening in the ILD layer is formed, thereby exposing the second insulating cover layer. A part of the second insulating cover layer and a part of the first insulating cover layer are removed, thereby exposing the top electrode. A conductive layer is formed in the opening contacting the top electrode.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dai, Yu-Teng Hsinchu, TW 45 11
Lai, Sheng-Chih Hsinchu, TW 126 509
Lee, Chien-Min Hsinchu, TW 210 1319
Lin, Chung-Te Hsinchu, TW 395 1052
Peng, Tai-Yen Hsinchu, TW 66 314
Tsai, Han-Ting Hsinchu, TW 82 398
Wei, Hui-Hsien Hsinchu, TW 46 133
Wen, Wei-Chih Hsinchu, TW 38 138

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