Temperature sensor circuits for integrated circuit devices

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12184271
APP PUB NO 20230412165A1
SERIAL NO

18238706

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Abstract

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An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO ROAD SOUTH KOREA SAMSUNG SUWON CITY LINGTONG DISTRICT NO 129 SUWON GYEONGGI-DO

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Walker, Darryl G San Jose, US 85 504

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