Method and apparatus for removal of surface carbon from polysilicon

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12187617
APP PUB NO 20210114885A1
SERIAL NO

17064789

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Abstract

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A method of removing surface carbon contamination from polycrystalline silicon comprises providing a polycrystalline silicon feed stream having surface carbon contamination, subjecting the polycrystalline silicon to a high velocity fluid selected from gas, gas/liquid mixtures, gas/solid mixtures and gas/solid/liquid mixtures to form a product stream comprising polycrystalline silicon having surface carbon in an amount of less than 200 parts per billion by weight based on weight of the polycrystalline silicon product and/or a reduction in surface carbon contamination of at least 20%. A system for conducting the method comprises an enclosure, a conveyer for moving a polycrystalline silicon feed stream through the enclosure, at least one stream of a high velocity fluid passing through outlets in the enclosure and directed at the feed stream, an ionizing source in the enclosure or integrated with the at least one stream of high velocity fluid, and an exhaust system for the enclosure.

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Patent Owner(s)

Patent OwnerAddress
HEMLOCK SEMICONDUCTOR OPERATIONS LLC12334 GEDDES ROAD PO BOX 80 HEMLOCK MI 48626

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cichowski, Brian S Saginaw, US 1 1
Loboda, Mark Bay City, US 24 701
Mueller, James J Saginaw, US 1 1
Mundell, James C Saginaw, US 3 1
Robinson, Christopher S Saginaw, US 2 32
Shamamian, Vasgen A Midland, US 5 41

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