Memory array, memory cell, and data read and write method thereof

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12190929
APP PUB NO 20230197133A1
SERIAL NO

18053898

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Abstract

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The present disclosure provides a memory array, a memory cell, and a data read and write method thereof. Two storage nodes are provided in each memory cell of a memory array of a magnetic random access memory (MRAM), such that when one storage node in the memory cell fails, the other storage node in the memory cell can be used to write and read data.

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Patent Owner(s)

Patent OwnerAddress
CHANGXIN MEMORY TECHNOLOGIES INCHEFEI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wang, Xiaoguang Hefei, CN 91 382
Wu, Yulei Hefei, CN 16 4

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