Ingot evaluation method and detecting apparatus

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United States of America Patent

PATENT NO 12203871
APP PUB NO 20230204520A1
SERIAL NO

17976886

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Abstract

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An ingot evaluation method and a detecting apparatus are provided. Defect information of a wafer is obtained from an ingot. The defect information includes a position of at least one defect identified by optical detection. A center-of-gravity position of the defect is determined according to the defect information. Uniformity of the defect is evaluated according to the center-of-gravity position. The uniformity is related to quality of a processed wafer.

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Patent Owner(s)

Patent OwnerAddress
GLOBALWAFERS CO LTDNO 8 INDUSTRIAL EAST ROAD SCIENCE-BASED INDUSTRIAL PARK HSINCHU R O C

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liang, Hsiu Chi Hsinchu, TW 3 1

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