Iridium-manganese-based tunnel magnetoresistance sensing element with tantalum-nitride buffer layer for increased thermal stability

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United States of America

PATENT NO 12210075
APP PUB NO 20240302459A1
SERIAL NO

18180600

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Abstract

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A tunnel magnetoresistance (TMR) sensing element includes a layer stack having a tantalum-nitride (TaN) layer; a reference layer system; a magnetic free layer having a magnetically free magnetization; and a tunnel barrier layer arranged between the reference layer system and the magnetic free layer. The reference layer system includes a pinned layer having a fixed pinned magnetization; a reference layer having a having a fixed reference magnetization; a coupling interlayer arranged between the pinned layer and the reference layer; and a natural antiferromagnetic (NAF) layer comprising iridium-manganese (IrMn), wherein the NAF layer is formed in direct contact with the TaN layer, wherein the NAF layer is configured to hold the fixed pinned magnetization in a first magnetic orientation and hold the fixed reference magnetization in a second magnetic orientation, and wherein the direct contact of the NAF layer with the TaN layer increases a blocking temperature of the NAF layer.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Endres, Bernhard Nabburg, DE 12 42

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