Method of manufacturing a semiconductor device and a semiconductor device

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United States of America

PATENT NO 12211895
SERIAL NO

17202237

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Abstract

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In a method of manufacturing a semiconductor device, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately stacked, is formed. A sacrificial gate structure is formed over the fin structure. The first semiconductor layers, the second semiconductor layer and an upper portion of the fin structure at a source/drain region of the fin structure, which is not covered by the sacrificial gate structure, are etched. A dielectric layer is formed over the etched upper portion of the fin structure. A source/drain epitaxial layer is formed. The source/drain epitaxial layer is connected to ends of the second semiconductor wires, and a bottom of the source/drain epitaxial layer is separated from the fin structure by the dielectric layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, I-Sheng Taipei, TW 118 649
Chen, Tzu-Chiang Hsinchu, TW 186 1189
Cheng, Chao-Ching Hsinchu, TW 148 545
Yang, Yu-Lin Baoshan Township, TW 72 984

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