Semiconductor device and method for fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12223989
APP PUB NO 20230140896A1
SERIAL NO

18151994

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Abstract

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A method for fabricating a semiconductor device is provided. The method includes forming a first memory cell and a second memory cell over a substrate, wherein each of the first and second memory cells comprises a bottom electrode, a resistance switching element over the bottom electrode, and a top electrode over the resistance switching element; depositing a first dielectric layer over the first and second memory cells, such that the first dielectric layer has a void between the first and second memory cells; depositing a second dielectric layer over the first dielectric layer; and forming a first conductive feature and a second conductive feature in the first and second dielectric layers and respectively connected with the top electrode of the first memory cell and the top electrode of the second memory cell.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Sheng-Chang Hsinchu County, TW 34 83
Chuang, Harry-Hak-Lay Zhubei, TW 379 2804
Huang, Sheng-Huang Hsinchu, TW 68 350
Wang, Hung-Cho Taipei, TW 15 125

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