Semiconductor device comprising wiring layer over driver circuit

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12225711
APP PUB NO 20240049449A1
SERIAL NO

18382551

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Abstract

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The memory capacity of a DRAM is enhanced. A semiconductor memory device includes a driver circuit including part of a single crystal semiconductor substrate, a multilayer wiring layer provided over the driver circuit, and a memory cell array layer provided over the multilayer wiring layer. That is, the memory cell array overlaps with the driver circuit. Accordingly, the integration degree of the semiconductor memory device can be increased as compared to the case where a driver circuit and a memory cell array are provided in the same plane of a substrate containing a singe crystal semiconductor material.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Takemura, Yasuhiko Kanagawa, JP 582 31804
Yamazaki, Shunpei Tokyo, JP 7534 239327

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