Yttrium ingot and sputtering target in which the yttrium ingot is used

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United States of America

PATENT NO 12227830
APP PUB NO 20230212734A1
SERIAL NO

17996718

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Abstract

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Provided is an yttrium ingot from which an yttrium sputtering target that produces a reduced number of particles can be obtained, and an yttrium sputtering target that has high plasma resistance and a low resistance that enables realization of a high film deposition rate can be obtained.

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Patent Owner(s)

  • TOSOH CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hara, Hiroyuki Ayase, JP 163 1426
Matsunaga, Osamu Ayase, JP 42 605
Mesuda, Masami Ayase, JP 25 19
Tsuchida, Yuya Ayase, JP 5 1

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