Phase shifter circuit, phase shifter layout and method of forming the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12229488
APP PUB NO 20220300694A1
SERIAL NO

17833436

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A phase shifter includes a first transistor and a second transistor. The first transistor includes a first gate terminal configured to receive a first voltage. The first transistor is configured to adjust at least a resistance or a first capacitance of the phase shifter responsive to the first voltage. The second transistor is coupled to the first transistor. The second transistor includes a second gate terminal configured to receive a second voltage. The second transistor is configured to adjust a second capacitance of the phase shifter responsive to the second voltage. The second gate terminal includes a first polysilicon portion and a second polysilicon portion extending in a first direction. The first polysilicon portion and the second polysilicon portion are positioned along opposite edges of an active region of the first transistor and the second transistor.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Ho-Hsiang Hsinchu, TW 72 956
Liao, Hsien-Yuan Hsinchu, TW 39 208
Lin, Chi-Hsien Hsinchu, TW 30 94
Lu, Ying-Ta Hsinchu, TW 54 312
Yeh, Tzu-Jin Hsinchu, TW 117 659

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