Semiconductor memory device with conductive layers separated between memory blocks
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United States of America
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Feb 18, 2025
Grant Date -
Sep 28, 2023
app pub date -
Sep 13, 2022
filing date -
Sep 13, 2022
priority date (Note) -
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Abstract
A semiconductor memory device includes memory blocks arranged in a first direction and bit lines that are arranged in a second direction, and are arranged with the memory blocks in a third direction. The memory block includes first conductive layers arranged in the third direction, a second conductive layer disposed on a side opposite to the bit lines in the third direction with respect to the first conductive layers, semiconductor layers that extend in the third direction, are opposed to the first conductive layers, have one ends in the third direction electrically connected to the second conductive layer, and have the other ends in the third direction electrically connected to the bit lines, and electric charge accumulating films disposed between the first conductive layers and the semiconductor layers. The first conductive layers and the second conductive layer are separated between the memory blocks.
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