Etch process for oxide of alkaline earth metal

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12237172
APP PUB NO 20230374670A1
SERIAL NO

17746406

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Abstract

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A method of processing a substrate that includes: loading the substrate in a plasma processing chamber, the substrate having a surface including an oxide, the oxide including an alkaline earth metal; flowing a process gas including CCl4 into the plasma processing chamber; in the plasma processing chamber, forming a fluorine-free plasma from the process gas by applying a source power to a source electrode of the plasma processing chamber; and exposing the substrate to the fluorine-free plasma to etch the oxide of the surface.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Vallee, Christophe Albany, US 31 201
Wang, Mingmei Albany, US 31 127
Zhang, Du Albany, US 20 7

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