Semiconductor device, method of manufacturing the same and electronic device including the same

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United States of America

PATENT NO 12245442
APP PUB NO 20200027950A1
SERIAL NO

16337882

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Abstract

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A semiconductor device including a substrate, a first source/drain layer, a channel layer and a second source/drain layer stacked on the substrate in sequence, and a gate stack surrounding a periphery of the channel layer. The channel layer includes a semiconductor material causing an increased ON current and/or a reduced OFF current as compared to Si.

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Patent Owner(s)

  • INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Radamson, Henry H Beijing, CN 3 10
Wang, Guilei Beijing, CN 27 125
Zhang, Yanbo Beijing, CN 15 70
Zhu, Huilong Poughkeepsie, US 705 13304
Zhu, Zhengyong Beijing, CN 38 140

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