Semiconductor device including epitaxial region
Number of patents in Portfolio can not be more than 2000
United States of America
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Mar 11, 2025
Grant Date -
Mar 14, 2024
app pub date -
Nov 17, 2023
filing date -
Nov 17, 2023
priority date (Note) -
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Abstract
A semiconductor device is provided. The semiconductor device includes: an active region on a semiconductor substrate; a channel region on the active region; a source/drain region adjacent to the channel region on the active region; a gate structure overlapping the channel region, on the channel region; a contact structure on the source/drain region; a gate spacer between the contact structure and the gate structure; and a contact spacer surrounding a side surface of the contact structure. The source/drain region includes a first epitaxial region having a recessed surface and a second epitaxial region on the recessed surface of the first epitaxial region, and the second epitaxial region includes an extended portion, extended from a portion overlapping the contact structure in a vertical direction, in a horizontal direction and overlapping the contact spacer in the vertical direction.
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