Semiconductor device with uneven electrode surface and method for fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12249569
APP PUB NO 20250079288A1
SERIAL NO

18747615

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Abstract

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The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a bottom conductive layer positioned on the substrate; at least one bottom conductive protrusion positioned on the bottom conductive layer; an insulator layer positioned on the bottom conductive layer and the at least one bottom conductive protrusion; at least one bottom insulating protrusion protruding from the insulator layer towards the bottom conductive layer and adjacent to the at least one bottom conductive protrusion; and a top conductive layer positioned on the insulator layer. The bottom conductive layer, the at least one bottom conductive protrusion, the insulator layer, the at least one bottom insulating protrusion, and the top conductive layer together configure a capacitor structure.

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Patent Owner(s)

  • NANYA TECHNOLOGY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ai, Tsu-Chieh Taitung, TW 9 0

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