Polishing pad and method of fabricating semiconductor device using the same

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United States of America

PATENT NO 12258460
APP PUB NO 20220073694A1
SERIAL NO

17467671

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Abstract

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Provided is a polishing pad including a polishing layer, wherein the nuclear magnetic resonance (NMR) 13C spectrum of a processed composition prepared by adding 1 g of the polishing layer to a 0.3 M aqueous solution of potassium hydroxide (KOH) and allowing the mixture to react in a closed container at a temperature of 150° C. for 48 hours includes a first peak appearing at 15 ppm to 18 ppm, a second peak appearing at 9 ppm to 11 ppm, a third peak appearing at 138 ppm to 143 ppm, and a fourth peak appearing at 55 ppm to 65 ppm, and the softening control index calculated by Equation 1 is 0.10 to 0.45. The polishing pad includes the polishing layer having physical properties corresponding to the softening control index, and thus may exhibit a removal rate and defect prevention performance within desired ranges in polishing of a polishing target.

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Patent Owner(s)

Patent OwnerAddress
SK ENPULSE CO LTDPYEONGTAEK-SI GYEONGGI-DO 17784

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jeong, Yong Ju Gyeonggi-do, KR 2 8
Joeng, Eun Sun Gyeonggi-do, KR 27 9
Kim, Seung Kyun Gyeonggi-do, KR 5 17
Seo, Jang Won Seoul, KR 130 360
Yun, Jong Wook Seoul, KR 39 24

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