Substrate stripping method and epitaxial wafer

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United States of America

PATENT NO 12261040
APP PUB NO 20240153761A1
SERIAL NO

17773293

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Abstract

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A substrate stripping method and an epitaxial wafer, relating to the technical field of semiconductors. The method comprises: providing a substrate (1), the substrate (1) having a recess, and the recess being distributed on a first surface (1a) of the substrate (1); forming a hydrophilic layer (3) in the recess; forming, on the first surface (1a), an etching sacrificial layer (4) covering the first surface (1a), the etching sacrificial layer (4) and the recess defining a flowing space (A); growing an epitaxial layer (5) on the etching sacrificial layer (4); and soaking the etching sacrificial layer (4) and the substrate (1) in an etching liquid, and corroding the etching sacrificial layer (4) by means of the etching liquid until the epitaxial layer (5) is separated from the substrate (1). The method can rapidly and uniformly etch the etching sacrificial layer (4).

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Patent Owner(s)

Patent OwnerAddress
HC SEMITEK (ZHEJIANG) CO LTDNO 233 SUFU ROAD SUXI TOWN YIWU CITY JINHUA CITY ZHEJIANG PROVINCE JINHUA CITY ZHEJIANG PROVINCE 322000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dong, Binzhong Jiangsu, CN 4 8
Hu, Hongpo Zhejiang, CN 8 22
Li, Peng Jiangsu, CN 915 8951
Wang, Jiangbo Jiangsu, CN 23 93

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