Importance

Loading Importance Indicators...

Abstract

According to an aspect there is provided a patterning method comprising:

over a lower pattern memorization layer, forming a pattern of first upper blocks, then an upper pattern memorization layer and then a pattern of second upper blocks;thereafter patterning upper trenches in the upper pattern memorization layer using lithography and etching, and forming spacer lines along sidewalls of the upper trenches to define spacer-provided upper trenches, at least a subset being interrupted by a respective first upper block;patterning first lower trenches in the lower pattern memorization layer by etching the spacer-provided upper trenches into the lower pattern memorization layer, at least a subset of the first lower trenches being interrupted by a lower pattern memorization layer portion preserved at a location defined by a respective one of the first upper blocks;thereafter, forming an auxiliary trench mask stack and patterning auxiliary trenches therein using lithography and etching; andthereafter, patterning the second lower trenches in the lower pattern memorization layer, the patterning comprising using the patterned auxiliary trench mask stack, the spacer lines and the second upper blocks as etch masks, at least a subset of the second lower trenches being interrupted by a lower pattern memorization layer portion preserved at a position defined by a respective one of the second upper blocks.

Loading the Abstract Image...

First Claim