Method for fabricating a strained semiconductor-on-insulator substrate

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United States of America

PATENT NO 12261079
APP PUB NO 20230386896A1
SERIAL NO

18449298

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Abstract

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A method for fabricating a strained semiconductor-on-insulator substrate comprises bonding a donor substrate to a receiving substrate with a dielectric layer at the interface. The donor substrate comprises a monocrystalline carrier substrate, an intermediate etch-stop layer, and a monocrystalline semiconductor layer. The monocrystalline semiconductor layer is transferred from the donor substrate to the receiving substrate. Trench isolations are formed to cut a portion from a layer stack including the transferred monocrystalline semiconductor layer, the dielectric layer, and the strained semiconductor material layer. The cutting operation results in relaxation of strain in the strained semiconductor material, and in application of strain to the transferred monocrystalline semiconductor layer. After transferring the monocrystalline semiconductor layer and before the cutting operation, a portion of the carrier substrate is selectively etched with respect to the intermediate layer, and the intermediate layer is selectively etched with respect to the monocrystalline semiconductor layer.

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Patent Owner(s)

Patent OwnerAddress
SOITEC38190 BERNIN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chabanne, Guillaume Le Touvet, FR 5 14
Daval, Nicolas Goncelin, FR 32 297
Schwarzenbach, Walter Saint Nazaire Les Eymes, FR 66 718

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