Plasma processing apparatus and method for venting a processing chamber to atmosphere

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12266508
APP PUB NO 20210074515A1
SERIAL NO

16953914

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Abstract

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A plasma processing apparatus includes a processing chamber in which plasma processing is performed on a wafer, a DP that reduces a pressure in the processing chamber via an evacuating pipe connected to the processing chamber, a TMP that performs evacuation such that a degree of vacuum of the processing chamber becomes a high degree of vacuum, and a stage on which the wafer is placed. Further, the plasma processing apparatus includes a He evacuating pipe that is a flow channel of a heat-transfer gas that transfers heat of the stage subjected to temperature adjustment to the wafer, a first gas supplying mechanism that supplies a gas to a portion of the evacuating pipe which is exposed to atmosphere, during venting a processing chamber to atmosphere, and a control device that controls the first gas supplying mechanism. The control device is provided to communicate with the evacuating pipe.

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Patent Owner(s)

Patent OwnerAddress
HITACHI HIGH-TECH CORPORATION17-1 TORANOMON 1-CHOME MINATO-KU TOKYO 105-6409

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ikenaga, Kazuyuki Tokyo, JP 31 138
Matsuzaki, Masaru Tokyo, JP 6 171

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