Patterning semiconductor devices and structures resulting therefrom

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12266529
APP PUB NO 20240063020A1
SERIAL NO

18501283

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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A method includes depositing a first mask over a target layer; forming a first mandrel and a second mandrel over the first mask; forming first spacers on the first mandrel and second spacers on the second mandrel; and selectively removing the second spacers while masking the first spacers. Masking the first spacers comprising covering the first spacers with a second mask and a capping layer over the second mask, and the capping layer comprises carbon. The method further includes patterning the first mask and transferring a pattern of the first mask to the target layer. Patterning the first mask comprises masking the first mask with the second mandrel, the first mandrel, and the first spacers.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSINCHU

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chao, Chia-Cheng Hsinchu, TW 20 6
Kao, Chun-Yu Hsinchu, TW 12 8
Lin, Sung-En Xionglin Township, TW 48 24

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