Semiconductor integrated circuit and data processing system

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6285597
APP PUB NO 20010000023A1
SERIAL NO

09725011

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A control of a flash memory includes control for supplying a pulse-shaped voltage to each of non-volatile memory cells until a threshold voltage of the non-volatile memory cell having a first threshold voltage is changed to a second threshold voltage. The control involves a first write mode (coarse write) in which the amount of change in threshold voltage of each non-volatile memory cell, which is varied each time the pulse-shaped voltage is applied, is relatively rendered high, and a second write mode (high-accuracy write) in which the amount of change in threshold voltage thereof is relatively rendered low. As compared with the high-accuracy mode, the number of pulses required to change the threshold voltage of each memory cell is smaller than that in the coarse write mode. Therefore, the number of verify operations at the time that the coarse write mode is used, is small and hence the entire write operation can be speeded up.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
RENESAS ELECTRONICS CORPORATIONTOKYO11993

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawahara, Takayuki Higashiyamato, JP 149 2902
Kimura, Katsutaka Akishima, JP 109 1865
Kotani, Hiroaki Ome, JP 49 982
Kubono, Shoji Akishima, JP 36 712
Noda, Satoshi Ome, JP 76 981
Nozoe, Atsushi Ome, JP 39 946
Sato, Hiroshi Ome, JP 749 7570
Yoshida, Keiichi Ome, JP 78 1898

Cited Art Landscape

Patent Info (Count) # Cites Year
 
BTG INTERNATIONAL INC. (1)
5218569 Electrically alterable non-volatile memory with n-bits per memory cell 202 1991
 
EMERGENCE MEMORY SOLUTIONS LLC (1)
5889698 Nonvolatile memory device and refreshing method 51 1997
 
RENESAS ELECTRONICS CORPORATION (1)
* 5757699 Programming which can make threshold voltages of programmed memory cells have a narrow distribution in a nonvolatile semiconductor memory 76 1997
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
TOSHIBA MEMORY CORPORATION (16)
* 7245528 Semiconductor memory device which stores plural data in a cell 49 2004
* 2005/0169,057 Semiconductor memory device which stores plural data in a cell 86 2004
* 7376009 Semiconductor memory device which stores plural data in a cell 21 2007
* 2007/0253,250 SEMICONDUCTOR MEMORY DEVICE WHICH STORES PLURAL DATA IN A CELL 45 2007
7738302 Semiconductor memory device with stores plural data in a cell 13 2008
* 2008/0219,058 SEMICONDUCTOR MEMORY DEVICE WHICH STORES PLURAL DATA IN A CELL 2 2008
* 8006145 Semiconductor integrated circuit device 0 2009
8154930 Semiconductor memory device which stores plural data in a cell 5 2010
* 8274836 Nonvolatile semiconductor memory device and nonvolatile semiconductor memory system 0 2011
* 2011/0188,319 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND NONVOLATILE SEMICONDUCTOR MEMORY SYSTEM 5 2011
8195993 Semiconductor integrated circuit device 2 2011
8385130 Semiconductor memory device which stores plural data in a cell 1 2012
8542538 Semiconductor memory device which stores plural data in a cell 2 2013
9142299 Semiconductor memory device which stores plural data in a cell 0 2013
9390802 Semiconductor memory device which stores plural data in a cell 0 2015
9627048 Semiconductor memory device which stores plural data in a cell 0 2016
 
RENESAS TECHNOLOGY CORP. (1)
* 2007/0247,918 Semiconductor Integrated Circuit 3 2004
 
U.S. BANK NATIONAL ASSOCIATION (1)
* 2010/0265,772 NAND MEMORY DEVICE AND PROGRAMMING METHODS 1 2010
 
SANDISK TECHNOLOGIES LLC (18)
7652918 Retention margin program verification 6 2006
* 7616499 Retention margin program verification 21 2006
* 2008/0158,989 RETENTION MARGIN PROGRAM VERIFICATION 16 2006
* 2008/0158,990 RETENTION MARGIN PROGRAM VERIFICATION 6 2006
8775901 Data recovery for defective word lines during programming of non-volatile memory arrays 13 2011
8750042 Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures 41 2011
8730722 Saving of data in cases of word-line to word-line short in memory arrays 17 2012
9165683 Multi-word line erratic programming detection 2 2013
8873288 Simultaneous sensing of multiple wordlines and detection of NAND failures 2 2014
9514835 Determination of word line to word line shorts between adjacent blocks 0 2014
9484086 Determination of word line to local source line shorts 0 2014
9460809 AC stress mode to screen out word line to word line shorts 0 2014
9443612 Determination of bit line to low voltage signal shorts 0 2014
9240249 AC stress methods to screen out bit line defects 0 2014
9202593 Techniques for detecting broken word lines in non-volatile memories 2 2014
9449694 Non-volatile memory with multi-word line select for defect detection operations 0 2014
9659666 Dynamic memory recovery at the sub-block level 0 2015
9653175 Determination of word line to word line shorts between adjacent blocks 0 2016
 
MONTEREY RESEARCH, LLC (2)
7221594 Semiconductor device and method for writing data into semiconductor device 0 2005
* 2006/0023,501 Semiconductor device and method for writing data into semiconductor device 0 2005
 
MICRON TECHNOLOGY, INC. (5)
7751242 NAND memory device and programming methods 3 2005
* 2007/0047,310 NAND memory device and programming methods 3 2005
* 7701762 NAND memory device and programming methods 1 2007
* 2007/0153,579 NAND memory device and programming methods 9 2007
7952924 NAND memory device and programming methods 0 2010
 
RENESAS ELECTRONICS CORPORATION (14)
* 6856550 Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data 22 2002
* 7002853 Memory card having a buffer memory for storing testing instruction 4 2004
* 2004/0236,910 Memory card having a buffer memory for storing testing instruction 1 2004
* 7173857 Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data 37 2005
* 2005/0128,811 Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data 72 2005
7292480 Memory card having buffer memory for storing testing instruction 0 2005
7440337 Nonvolatile semiconductor memory apparatus having buffer memory for storing a program and buffering work data 0 2007
* 2008/0046,643 Memory card 1 2007
* 7821824 Semiconductor integrated circuit having buses with different data transfer rates 1 2008
* 2009/0052,238 SEMICONDUCTOR INTEGRATED CIRCUIT 4 2008
7978545 Semiconductor integrated circuit 0 2010
* 2010/0220,531 SEMICONDUCTOR INTEGRATED CIRCUIT 4 2010
8130571 Semiconductor integrated circuit 4 2011
8576643 Semiconductor integrated circuit 1 2012
 
SAMSUNG ELECTRONICS CO., LTD. (5)
* 6914827 Flash memory device capable of preventing an over-erase of flash memory cells and erase method thereof 11 2003
* 2004/0066,685 Flash memory device capable of preventing an over-erase of flash memory cells and erase method thereof 5 2003
* 7190624 Flash memory device capable of preventing an over-erase of flash memory cells and erase method thereof 2 2005
7366020 Flash memory device capable of preventing an overerase of flash memory cells and erase method thereof 8 2007
* 8094495 Nonvolatile memory device 3 2009
 
KABUSHIKI KAISHA TOSHIBA (13)
* 7405970 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell 10 2007
* 2008/0043,530 NON-VOLATILE SEMICONDUCTOR MEMORY ADAPTED TO STORE A MULTI-VALUED DATA IN A SINGLE MEMORY CELL 1 2007
7672168 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell 7 2008
* 2008/0298,129 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE ADAPTED TO STORE A MULTI-VALUED DATA IN A SINGLE MEMORY CELL 4 2008
7864591 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell 7 2010
* 2010/0118,607 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE ADAPTED TO STORE A MULTI-VALUED DATA IN A SINGLE MEMORY CELL 1 2010
8208311 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell 1 2010
* 2011/0090,741 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE ADAPTED TO STORE A MULTI-VALUED DATA IN A SINGLE MEMORY CELL 1 2010
8605511 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell 8 2012
8929135 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell 2 2013
9257189 Non-volatile semiconductor memory adapted to store a multi-valued data in a single memory cell 0 2014
9508422 Non-volatile semiconductor memory adapted to store a multi-valued data in a single memory cell 0 2015
9734899 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell 0 2016
 
RENESAS DEVICES DESIGN CORP. (1)
* 7050336 Nonvolatile semiconductor memory device having reduced erasing time 7 2004
* Cited By Examiner