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Abstract

A field-effect transistor and a method for its fabrication are described. The transistor includes a monocrystalline channel region extending from a monocrystalline body region of a semiconductor substrate. First and second source/drain regions laterally adjoin opposite sides of the channel region and are electrically isolated from the body region by an underlying first dielectric layer. The source/drain regions include both polycrystalline and monocrystalline semiconductor regions. A conductive gate electrode is formed over a second dielectric layer overlying the channel region. The transistor is formed by selectively oxidizing portions of a monocrystalline semiconductor substrate and then removing portions of the oxidized substrate. The resulting structure includes a body region of the substrate having overlying first and second oxide regions, with a protruding channel region extending from the body region between the oxide regions. Polycrystalline semiconductor material is then deposited under conditions conducive to partial epitaxial growth. A planarizing process then exposes a surface structure in which the first and second part-polycrystalline, part-moncrystalline semiconductor source/drain regions laterally adjoin opposite sides of the monocrystalline channel region. Additional process steps then provide the gate dielectric and gate electrode regions, desired doping levels, an interlevel covering dielectric, metallization contacts, etc.

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