Method of patterning dielectric
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United States of America Patent
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app pub date -
Dec 4, 2000
filing date -
Dec 3, 1997
priority date (Note) -
Abandoned
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Abstract
A method of patterning a dielectric layer. On a substrate having a metal wiring layer formed thereon, a dielectric layer and a masking layer are formed. A cap insulation layer is formed on the masking layer before patterning the dielectric layer. In addition, a dual damasecence process is used for patterning the dielectric layer.
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