Silicide glue layer for W-CVD plug application
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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-
N/A
Issued Date -
Apr 5, 2001
app pub date -
Nov 30, 2000
filing date -
Nov 6, 1997
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A new method of tungsten plug metallization using a silicide glue layer is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer is provided covering the semiconductor device structures wherein a contact opening is made through the insulating layer to one of the semiconductor device structures. A silicide layer is deposited conformally over the surface of the insulating layer and within the contact opening as a combined ohmic contact and glue layer. In a first embodiment, a tungsten layer is deposited overlying the silicide layer. The tungsten layer not within the contact opening is removed to complete the formation of the tungsten plug metallization. In a second embodiment, the silicide layer not within the contact opening is selectively removed and a tungsten layer is selectively deposited overlying the silicide layer within the contact opening to complete formation of the tungsten plug metallization in the fabrication of an integrated circuit.
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