Method of fabricating a semiconductor insulation layer
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United States of America Patent
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-
Apr 2, 2002
Issued Date -
N/A
app pub date -
Dec 5, 2000
filing date -
Aug 18, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention defines a method for fabricating a semiconductor insulation layer: A semiconductor substrate is first provided; an insulation layer is applied by way of region-by-region or whole-area application to the semiconductor substrate; impurity ions are selectively implanted into at least one predetermined zone of the insulation layer; then the insulation layer is selectively etched, and the insulation layer is thereby patterned in accordance with the zone or zones of the selectively implanted impurity ions.
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