Method for treatment of semiconductor substrates
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Issued Date -
N/A
app pub date -
Dec 5, 2000
filing date -
Aug 14, 1997
priority date (Note) -
Abandoned
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Abstract
A gas pipe system for a process reactor is described, which may be, for example, a vertical oven for depositing an As-doped SiO.sub.2 layer onto wafers. The gas pipe system has a TEAS bubbler which is connected on the input side to a carrier gas source and, on the output side, is connected via at least one heated pipe to the process reactor. Furthermore, a TEOS evaporator is provided, which is connected on the input side to a gas source and, on the output side, is connected via at least one heated pipe to the process reactor. Furthermore, a vertical oven and a method for deposition of an As-doped SiO.sub.2 layer onto wafers are described, with the gas pipe system being used in each case.
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