Structure and method for gated lateral bipolar transistors
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United States of America Patent
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Apr 2, 2002
Issued Date -
N/A
app pub date -
Dec 6, 2000
filing date -
Mar 30, 1998
priority date (Note) -
Expired
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Abstract
An improved structure and method for gated lateral bipolar transistors is provided. The present invention capitalizes on opposing sidewall structures and adjacent conductive sidewall members to conserve available surface space on the semiconductor chips. The conserved surface space allows a higher density of structures per chip. The conductive sidewall members couple to the gate of the gated lateral bipolar transistor and, additionally, to a retrograded, more highly doped bottom layer. The improved structure provides for both metal-oxide semiconductor (MOS) type conduction and bipolar junction transistor (BJT) type conduction beneath the gate of the gated lateral bipolar transistor.
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