Semiconductor device manufacturing method including forming FOX with dual oxidation
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United States of America Patent
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Jun 17, 2003
Grant Date -
Apr 12, 2001
app pub date -
Dec 1, 2000
filing date -
Oct 18, 1996
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Abstract
In a method of manufacturing a semiconductor device, there are comprised the steps of forming an oxidation preventing layer on a surface of a semiconductor substrate, forming a first window in the oxidation preventing layer, placing the semiconductor substrate in a first atmosphere in which an oxygen gas and a first amount of a chlorine gas are supplied through and then heating the semiconductor substrate at a first temperature such that a first selective oxide film is to grown by thermally oxidizing the surface of the semiconductor substrate exposed from the first window, forming a second window by patterning the oxidation preventing layer, and placing the semiconductor substrate in a second atmosphere in which the oxygen gas and a second amount, which is larger than the first amount, of the chlorine gas are supplied through and then heating the semiconductor substrate at a second temperature such that a second selective oxide film is formed and that a thickness of the first selective oxide film formed below the first window is enhanced. Accordingly, generation of projection on bird's beak of a selective oxide film can be prevented in a semiconductor device manufacturing method including a step of growing a local oxidation of silicon film.
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- 15 United States
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- 8 Japan
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- 5 Korea
- 2 Other
Patent Owner(s)
- ADVANCED MICRO DEVICES, INC.;FUJITSU LIMITED;FUJITSU AMD SEMICONDUCTOR LIMITED
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Higashitani, Masaaki | Kanagawa, JP | 272 | 4649 |
Komori, Hideki | Kanagawa, JP | 22 | 418 |
Kurihara, Hideo | Kanagawa, JP | 20 | 232 |
Shimada, Hiroyuki | Shizuoka, JP | 129 | 1368 |
Takahashi, Satoshi | Kanagawa, JP | 378 | 4601 |
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