Semiconductor device having quantum dots
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United States of America Patent
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Jul 23, 2002
Issued Date -
N/A
app pub date -
Dec 14, 2000
filing date -
Dec 16, 1997
priority date (Note) -
Expired
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Abstract
A method for forming quantum dots using agglomeration of a conductive layer and a semiconductor device resulting therefrom are disclosed. The method includes the steps of forming a first insulating layer on a substrate, forming a conductive layer on the first insulating layer, forming a second insulating layer on the conductive layer, and annealing the conductive layer between the first, and second insulating layers to agglomerate the conductive layer.
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