Dielectric film deposition employing a bistertiarybutylaminesilane precursor
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United States of America Patent
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Aug 21, 2001
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app pub date -
Nov 30, 2000
filing date -
May 28, 1999
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Abstract
A method and an apparatus for increasing a deposition rate of dielectric films deposited on a substrate for a given temperature while providing the same with good step coverage and gap-fill properties. This is achieved by employing bistertiarybutylaminesilane as a silicon source to react with an oxidizing agent to form a dielectric film on a substrate that includes silicon.
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