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Abstract

A method for forming a magnetoresistive (MR) sensor element. There is first provided a substrate. There is then formed over the substrate a seed layer. There is then formed contacting a pair of opposite ends of the seed layer a pair of patterned conductor lead layer structures. There is then etched, while employing an ion etch method, the seed layer and the pair of patterned conductor lead layer structures to form an ion etched seed layer and a pair of ion etched patterned conductor lead layer structures. Finally, there is then formed upon the ion etched seed layer and the pair of ion etched patterned conductor lead layers structures a magnetoresistive (MR) layered structure. Withip the magnetoresistive (MR) sensor element, the pair of patterned conductor lead layer structures may be formed within a pair of recesses within an ion etch recessed dielectric isolation layer.

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First Claim