Method for forming a non-volatile memory cell that eliminates substrate trenching
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United States of America Patent
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Mar 26, 2002
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N/A
app pub date -
Dec 7, 2000
filing date -
Jul 17, 1998
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Abstract
In a non-volatile memory cell that has a select transistor and a memory transistor, the substrate trenching that occurs when the gate of the select transistor and the stacked gate of the memory transistor are initially defined is eliminated by forming the gate of the select transistor and the stacked gate of the memory transistor to have substantially the same step height.
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