Active matrix display device having multiple gate electrode portions
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United States of America Patent
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Jul 30, 2002
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N/A
app pub date -
Dec 13, 2000
filing date -
Nov 21, 1996
priority date (Note) -
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Abstract
In a thin-film transistor of multi-gate structure, the width of a channel forming region 108 closest to a drain region 102 is made the narrowest. This prevents a transistor structure closest to the drain region from first deteriorating. Further, the channel length at the vicinity of a center of an active layer is intentionally widened, so that the amount of current flowing through the vicinity of the center of the active layer is decreased and the deteriorating phenomenon due to heat accumulation is prevented. Therefore, a semiconductor device with a high reliability is realized.
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