Output synchronization-free, high-fanin dynamic NOR gate

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6448817
APP PUB NO 20010000652A1
SERIAL NO

09734713

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An article of manufacture describes and simulates a logic device that detects the all-zero scenario for an n-bit word. The n-bit word has a selected bit that is defined using a high-inactive convention, and (n-1) non-selected bits that are defined using a high-active convention. The article of manufacture is embodied as a computer useable medium configured to store computer program codes that describe and simulate the logic device. The logic device described by the computer program codes includes an output FET, a pre-charging circuit, a first evaluation circuit, and (n-1) second evaluation circuits. The pre-charging circuit charges the output FET gate, drain, and source to a pre-charge voltage during a low clock cycle. During a high clock cycle, the first evaluation circuit evaluates the selected bit and discharges the pre-charge voltage on the output FET source if the selected bit is a voltage high. The (n-1) second evaluation circuits evaluate the non-selected bits and maintain the pre-charge voltage on the output FET gate if each of the non-selected bits is a voltage low. The output FET conducts if the pre-charge voltage is maintained on the output FET gate and if the output FET source is discharged to ground. The drain of the output FET discharges to a low voltage if the output FET conducts, which indicates the all-zero scenario for the n-bit word.

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Patent Owner(s)

  • ARM FINANCE OVERSEAS LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Reaves, Jimmy Lee San Jose, CA 7 39

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