Semiconductor integrated circuit device
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United States of America Patent
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-
Sep 11, 2001
Grant Date -
May 3, 2001
app pub date -
Dec 22, 2000
filing date -
Apr 9, 1998
priority date (Note) -
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status (Latency Note)
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Abstract
In a semiconductor integrated circuit in which an internal voltage generation circuit operating on a power supply voltage supplied through an external terminal forms either or both of a low voltage and a boosted voltage to operate internal circuits, a first internal circuit operating on the power supply voltage supplied through the external terminal or the boosted voltage formed by the internal voltage generation circuit is constituted by a first MOSFET with a gate insulation film having a large thickness adapted to the power supply voltage or boosted voltage, and a second internal circuit operating on the low voltage is constituted by a second MOSFET with a gate insulation film having a small thickness adapted to the low voltage.
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