Semiconductor device and method for fabricating the same
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United States of America Patent
Stats
-
Jan 21, 2003
Grant Date -
May 10, 2001
app pub date -
Dec 15, 2000
filing date -
May 8, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device and method of fabricating the same. The semiconductor device includes a first insulating film formed on a substrate and having a plurality of holes therein; a cavity formed under the first insulating film; an impurity region formed in the substrate and around the cavity; a second insulating film formed on portions of the first insulating film to fill the holes and a space between the cavity and the impurity region; a plurality of contact holes formed to expose certain portions of the impurity region; and a plurality of wiring layers formed to be in contact with the impurity region through the contact holes.
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