Semiconductor photonic device, method for making the same, and method for forming ZnO film
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United States of America Patent
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Sep 18, 2001
Grant Date -
May 10, 2001
app pub date -
Jan 2, 2001
filing date -
Jul 21, 1998
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Abstract
A semiconductor photonic device contains a substrate; a ZnO buffer layer provided on the substrate; and a semiconductor compound provided on the ZnO buffer layer and represented by In.sub.x Ga.sub.y Al.sub.z N wherein x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1 and 0.ltoreq.z.ltoreq.1, wherein the ZnO buffer layer has a lattice constant of about 5.2070 .ANG. or more in the c-axis direction.
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