
US Patent Application No: 2001/0000,953
Number of patents in Portfolio can not be more than 2000
Single-ended semiconductor receiver with built in threshold voltage difference
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May 10, 2001
Publication date -
Jan 5, 2001
filing date -
09/755,493
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Abstract
A differential receiver for sensing small input voltage swings by using a built in reference voltage obtained by a difference in threshold voltage between a differential pair of closely spaced transistors. The difference in threshold voltage can be produced by different values of ion implantation of the gates of the transistor pair with the same material, or by dosages using different materials. The difference in threshold voltage can also be obtained by using different transistor channel lengths. The threshold voltages can also be modulated by the control of the transistor substrate voltages using a voltage control substrate means.
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