Method for manufacturing a field emission element
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United States of America Patent
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N/A
Issued Date -
May 17, 2001
app pub date -
Jan 3, 2001
filing date -
Jun 22, 1998
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method of manufacturing a field emission element including the steps of: forming a conductive film on an antireflection film; forming a resist pattern on the antireflection film through photolithography; forming holes through the antireflection film and conductive film by using the resist pattern as a mask; removing the resist pattern, depositing a first sacrificial film over a substrate and etching back the first sacrificial film to leave a side spacer on an inner wall of the hole of the conductive film; depositing a second sacrificial film over the substrate and forming a conductive emitter electrode on the second sacrificial film; and partially removing the second sacrificial film to expose a tip portion of the emitter electrode. This method can form a gate hole at a high precision in size.
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