Process for fabricating a thin-film device having inclined sides
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United States of America Patent
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Oct 26, 2004
Issued Date -
N/A
app pub date -
Jan 18, 2001
filing date -
Mar 14, 1997
priority date (Note) -
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Abstract
In a process for producing a thin-film device, a conducting layer composed of an anodically oxidizable metal is formed on a substrate and is etched to form gate bus lines and gate electrode having upper surfaces parallel to the substrate and inclined side surfaces. The gate bus lines and the gate electrodes are anodically oxidized, so that they include inner conducting portions and outer insulating oxide films covering the inner conducting portions. The outer insulating films prevent the bus lines from short circuiting, and the inclined side surfaces of the bus lines makes it possible to fabricate a dense wiring arrangement.
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