Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration

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United States of America Patent

PATENT NO 6667495
APP PUB NO 20010001484A1
SERIAL NO

09732989

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Abstract

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A semiconductor configuration with ohmic contact-connection includes a first and a second semiconductor region made of silicon carbide, each having a different conduction type. A first and a second contact region serve for contact-connection. The first contact region and the second contact region have an at least approximately identical material composition which is practically homogeneous within the respective contact region. A method is provided for contact-connecting n-conducting and p-conducting silicon carbide, in each case with at least approximately identical material.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Friedrichs, Peter Nurnberg, DE 22 475
Peters, Dethard Hochstadt, DE 73 734
Schorner, Reinhold Grossenseebach, DE 14 286

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