Thin film transister semiconductor devices
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United States of America Patent
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Dec 17, 2002
Issued Date -
N/A
app pub date -
Dec 26, 2000
filing date -
Jul 27, 1995
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Abstract
In an active matrix liquid crystal display (LCD) device a conductor line interconnecting a drain of each thin-film transistor and a corresponding pixel electrode constructed with indium tin oxide (ITO) is formed in a three-layer structure in which an aluminum film is sandwiched between a pair of titanium films. This construction prevents poor contact and deterioration of reliability because electrical contact is established between one titanium film and semiconductor and between the other titanium film and ITO. The aluminum film has low resistance which is essential for ensuring high performance especially in large-screen LCDs.
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