Importance

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Abstract

On the surface of a field oxide film (3 of FIG. 2e) formed-on a substrate region where the effective thickness in the vertical direction of a substrate is diminished due to the presence of a crystal defect (2 of FIG. 1a), the field oxide film is etched by a predetermined thickness until a recess (4 of FIG. 2f) ascribable to the presence of the defect is exposed (step of FIG. 2f). A new oxide film then is formed in an amount corresponding to the above-mentioned thickness on the field oxide film (step of FIG. 3g) to diminish the depth of the recess ascribable to the presence of the defect. To provide a semiconductor device in which leakage between elements can be eliminated with a thin LOCOS oxide film thickness remaining unchanged.

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First Claim