Semiconductor storage device and method of driving thereof
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United States of America Patent
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Aug 7, 2001
Grant Date -
May 24, 2001
app pub date -
Oct 22, 1999
filing date -
Oct 26, 1998
priority date (Note) -
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Abstract
In a semiconductor storage device comprising a plurality of memory cells P formed in a matrix form in a semiconductor substrate, write and read for each of which is carried out through a word line and bit line, wherein each said memory cells includes a first and a second memory transistor MT1 and MT2 connected in series. In this configuration, the semiconductor storage device with high reliability which produces abnormality in operation can be provided.
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