Method of producing an optical semiconductor device having a waveguide layer buried in an InP current blocking layer
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United States of America Patent
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May 21, 2002
Grant Date -
May 24, 2001
app pub date -
Jan 9, 2001
filing date -
May 16, 1997
priority date (Note) -
Expired
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Abstract
An integrated semiconductor laser produced by forming waveguide layers each having a particular band gap and a particular layer thickness collectively and then forming an InP current blocking layer. After an InGaAsP layer has been formed on an InP substrate, a waveguide including a multiple quantum well active layer is formed by selective MOVPE. Then, the waveguide is buried in an InP current blocking layer. In this configuration, the current blocking layer exhibits its expected function without regard to the width of SiO.sub.2 stripes used for selective metalorganic vapor phase epitaxial growth (MOVPE). The laser is feasible for high output operation and can be produced at a high yield.
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